In-situ clean process for metal deposition chambers
AssigneeApplied Materials, Inc.
InventorsMichael Jackson, Song-Moon Suh, Arvind Sundarajjan, Murali K. Narasimhan, Sriskantharajah Thirunavukarasu
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Abstract
Embodiments of the invention include methods for in-situ chamber dry clean for metal deposition chambers. In one embodiment, a method for in-situ chamber dry clean after a metal deposition process includes placing a substrate in a processing chamber, performing a metal deposition process on the substrate in the processing chamber, removing the substrate from the support pedestal, and performing an in-situ cleaning process by supplying a cleaning gas containing H2 to the processing chamber while a dummy substrate is disposed in the processing chamber
Claims13
A method for in-situ chamber dry clean after a metal deposition process, comprising:
- placing a substrate in a processing chamber;
- performing a metal deposition process on the substrate in the processing chamber;
- removing the substrate from the support pedestal;
- and
- performing an in-situ cleaning process by supplying a cleaning gas containing H2 to the processing chamber while a dummy substrate is disposed in the processing chamber.
A method for in-situ chamber dry clean after a metal deposition process, comprising:
- placing a substrate in a processing chamber;
- performing a metal deposition process on the substrate in the processing chamber;
- removing the substrate from the support pedestal;
- and
- performing an in-situ cleaning process comprising:
- placing a dummy substrate in the processing chamber;
- forming a hydrogen containing plasma in the processing chamber in the presence of the dummy substrate;
- and
- replacing the hydrogen containing plasma with a nitrogen containing plasma in the presence of the dummy substrate.
Dependencies are inferred from the claim text.