Semiconductor device having compensation capacitance

A semiconductor device comprising:

• a plurality of memory mats arranged in a first direction;
• a plurality of sense areas each arranged between two of the memory mats, each of the sense areas including a plurality of sense amplifiers selected based on a column selection signal;
• a column decoder generating the column selection signal;
• a column selection line extending in the first direction on the memory mats and supplying the column selection signal from the column decoder to the sense areas;
• and
• a compensation capacitance provided on one of the memory mats which is located farther than the other of the memory mats from the column decoder,
• wherein the compensation capacitance includes a first capacitance electrode to which a first power source potential is supplied and a second capacitance electrode to which a second power source potential is supplied, and at least one of the first and second capacitance electrodes is formed in a same wiring layer as the column selection line.