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US 2012/0235295 A1Published application
Barrier-metal-free copper damascene technology using enhanced reflow
AssigneeMosaid Technologies Incorporated
InventorsKie Y. AHN, Leonard Forbes
Life of this patent
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Abstract
A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
Claims21
A method of forming a contact in an opening in an insulative material, comprising:
- forming a non-metal barrier material over the insulative material within the opening;
- depositing a conductive material over the non-metal barrier material to fill the opening;
- and
- reflowing the conductive material in an atmosphere selected to allow formation of a substantially void-free layer of conductive material at a temperature of less than about 400° C.
1 more element
A contact in an opening in an insulative material, produced by the process of:
- forming a non-metal barrier material over the insulative material within the opening;
- depositing a conductive material over the non-metal barrier material to fill the opening;
- and
- reflowing the conductive material in an atmosphere selected to allow formation of a substantially void-free layer of conductive material at a temperature of less than about 400° C.
1 more element
A contact in an opening in an insulative material, produced by the process of:
- forming a non-metal barrier material over the insulative material within the opening;
- depositing a conductive material over the non-metal barrier material to fill the opening selected from the group of ionized sputtering and metal evaporation;
- and
- reflowing the conductive material in an atmosphere selected to allow formation of a substantially void-free layer of conductive material at a temperature of about 320° C.
1 more element
Dependencies are inferred from the claim text.