Integrated circuit including a bipolar transistor and methods of making the same

An integrated circuit comprising:

• a first electrode having an opening disposed over a substrate;
• at least one germanium-containing layer disposed along a sidewall and a bottom of the opening;
• at least one isolation structure disposed adjacent to a sidewall of the at least one germanium-containing layer, wherein the at least one isolation structure is a multi-layer structure;
• and
• a second electrode disposed in the opening, wherein a top surface of the at least one isolation structure is disposed between and electrically isolates a top surface of an emitter electrode from a top surface of the at least one germanium-containing layer, wherein the second electrode is in direct contact with each layer of the multi-layer structure of the at least one isolation structure.

A method of forming an integrated circuit, the method comprising:

• forming a first electrode having an opening over a substrate;
• forming at least one germanium-containing layer along a sidewall and a bottom of the opening;
• forming at least one isolation structure adjacent to a sidewall of the at least one germanium-containing layer, wherein forming the at least one isolation structure includes:
• forming a first dielectric layer adjacent to a sidewall of the at least one germanium-containing layer;
• forming a second dielectric layer adjacent to the first dielectric layer;
• and
• removing a portion of the first dielectric layer and a portion of the second dielectric layer to expose portions of the at least one germanium-containing layer;
• and
• forming a second electrode disposed in the opening, wherein a top surface of the at least one isolation structure is formed between and electrically isolates a top surface of an emitter gate electrode from a top surface of the at least one germanium-containing layer.