Fin fet device with independent control gate
AssigneeInternational Business Machines Corporation
InventorsJosephine B. Chang, Michael A. Guillorn, Chung-hsun Lin
Life of this patent
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Abstract
A FinFET device with an independent control gate, including: a silicon-on-insulator substrate; a non-planar multi-gate transistor disposed on the silicon-on-insulator substrate, the transistor comprising a conducting channel wrapped around a thin silicon fin; a source/drain extension region; an independently addressable control gate that is self-aligned to the fin and does not extend beyond the source/drain extension region, the control gate comprising: a thin layer of silicon nitride; and a plurality of spacers.
Claims20
A method for producing an independently addressable control gate, the method comprising steps of:
- performing shallow trench isolation process on a SiO2 substrate;
- growing a control gate oxide on the substrate, followed by depositing a control gate material to form the control gate;
- depositing oxide and nitride layers on the control gate for use as fin and control gate hard-masks, wherein the hard-masks are used to define the control gate and fin;
- patterning the hard-masks;
- depositing a sacrifical gate material on the control gate;
- patterning the sacrifical gate material to produce a dummy gate pattern;
- depositing a sacrificial oxide layer over the dummy gate pattern, whereby the dummy gate pattern is obscured;
- and
- planarizing the sacrificial oxide layer to reveal the obscured dummy gate.
A FinFET device with independent control gate, comprising:
- a silicon-on-insulator substrate;
- a nonplanar multi-gate transistor disposed on the silicon-on-insulator substrate, the device comprising a conducting channel wrapped around a silicon fin;
- a source/drain extension region;
- and
- an independently addressable control gate that is self-aligned to the fin and does not extend beyond the source/drain extension region, the control gate comprising:
- a layer of silicon nitride;
- and
- at least one spacer coupled to the substrate.
Dependencies are inferred from the claim text.