Semiconductor light-emitting device and manufacturing method

A semiconductor light-emitting device, comprising:

• a base board having a mounting surface and a conductor pattern located adjacent the mounting surface;
• at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps;
• a wavelength converting layer having a top surface, a side surface, a bottom surface and an edge portion located between the top surface and the side surface, the wavelength converting layer including at least one phosphor, and located over the top surface of the at least one semiconductor light-emitting chip so that the bottom surface of the wavelength converting layer covers the top surface of the at least one semiconductor light-emitting chip;
• a transparent material layer having a side surface disposed between the bottom surface of the wavelength converting layer and the side surface of the at least one semiconductor light-emitting chip so that the side surface of the transparent material layer extends from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer;
• a frame located adjacent the mounting surface of the base board so as to surround the at least one semiconductor light-emitting chip, the transparent material layer and the wavelength converting layer;
• a reflective material layer having a top surface, a side slant surface and an end of the top surface, disposed at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, the side slant surface of the reflective material layer contacting with the side surface of the transparent material layer and extending from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer, the end of the top surface of the reflective material layer contacting with the side surface of the wavelength converting layer, and the top surface of the reflective material layer including one of a concave meniscus shape and a convex meniscus shape;
• and
• a light-absorbing layer having a top surface and an end of the top surface, and disposed on the one of the concave meniscus shape and the convex meniscus shape of the reflective material layer, wherein the end of the top surface of the light-absorbing layer contacts with the side surface of the transparent plate at a position that is higher relative to the base board than the end of the top surface of the reflective material layer.

A semiconductor light-emitting device, comprising:

• a base board having a mounting surface and a conductor pattern located adjacent the mounting surface;
• at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps;
• a transparent plate having a top surface, a side surface, a bottom surface and an edge portion located between the top surface and the side surface, and located over the top surface of the at least one semiconductor light-emitting chip so that the bottom surface of the transparent plate covers the top surface of the at least one semiconductor light-emitting chip;
• a wavelength converting layer having a side surface and including at least one phosphor, the wavelength converting layer disposed between the bottom surface of the transparent plate and the side surface of the at least one semiconductor light-emitting chip so that the side surface of the wavelength converting layer extends from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the transparent plate;
• a frame located adjacent the mounting surface of the base board so as to surround the at least one semiconductor light-emitting chip, the wavelength converting layer and the transparent plate;
• a reflective material layer having a top surface, a side slant surface and an end of the top surface, disposed at least between the frame and both the side surface of the transparent plate and the side surface of the wavelength converting layer and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, the side slant surface of the reflective material layer contacting with the side surface of the wavelength converting layer and extending from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the transparent plate, the end of the top surface of the reflective material layer contacting with the side surface of the transparent plate, and the top surface of the reflective material layer including one of a concave meniscus shape and a convex meniscus shape;
• and
• a light-absorbing layer having a top surface and an end of the top surface, and disposed on the one of the concave meniscus shape and the convex meniscus shape of the reflective material layer, wherein the end of the top surface of the light-absorbing layer contacts with the side surface of the transparent plate at a position that is higher relative to the base board than the end of the top surface of the reflective material layer.