Photo-crosslinkable material for organic thin film transistor insulating layer
AssigneeSumitomo Chemical Company, Limited
InventorIsao Yahagi
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AssigneeSumitomo Chemical Company, Limited
InventorIsao Yahagi
Estimating the term…
A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group.
An organic thin film transistor insulating layer material comprising a macromolecular compound that has a repeating unit represented by the formula:
Dependencies are inferred from the claim text.