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US 2012/0235118 A1Published application
Nitride gate dielectric for graphene mosfet
AssigneeInternational Business Machines Corporation
InventorsPhaedon Avouris, Deborah Neumayer, Wenjuan Zhu
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Abstract
A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.
Claims25
A semiconductor structure comprising:
- a substrate;
- a graphene layer on the substrate;
- a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension;
- a nitride layer on the graphene layer between the source electrode and drain electrode;
- and
- a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.
3 more elements
A method of forming a semiconductor structure comprising:
- providing a substrate;
- forming a graphene layer on the substrate;
- depositing a nitride layer on the graphene layer;
- forming a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension, the nitride layer extending at least part of the predetermined dimension between the source electrode and drain electrode;
- and
- forming a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.
3 more elements
Dependencies are inferred from the claim text.