US 2012/0235081 A1Published application

Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

AssigneeBASF SE

InventorsVijay Immanuel Raman, Sophia Ebert, Mario Brands, Yongqing Lan, Philipp Zacharias, Ilshat Gubaydullin, Yuzhuo Li

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Abstract

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start,—an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Claims23

Dependent claims

A process, comprising:

(1) contacting a surface of a bulk material layer of a substrate with an aqueous chemical mechanical polishing agent exhibiting at the end of a chemical mechanical polishing, without addition of any supplementary material;
the same or essentially the same static etch rate SER as at a start of the chemical mechanical polishing, and a lower material removal rate MRR than at the start of the chemical mechanical polishing;
a lower static etch rate SER than at the start of the chemical mechanical polishing, and the same or essentially the same material removal rate MRR as at the start of the chemical mechanical polishing;
or
a lower static etch rate SER and a lower material removal rate MRR than at the start of the chemical mechanical polishing;
(2) chemically and mechanically polishing the bulk material layer with the aqueous chemical mechanical polishing agent while:
an initial SER of the chemical polishing agent remains the same or essentially the same, and an initial MRR of the chemical polishing agent decreases;
the initial SER decreases, and the initial MRR remains the same or essentially the same;
or
the initial SER and the initial MRR both decrease,
until a bulk metal layer is removed and a substrate surface is exposed;
and
(3) continuing chemical mechanical polishing with the chemical mechanical polishing agent
until all material residuals are removed from the exposed surface.

11 more elements

An aqueous chemical mechanical polishing agent (A), comprising:

(a1) a component (a1) selected from the group consisting of:
a copolymer formed from at least one monomer selected from the group consisting of acrylic acid, methacrylic acid, maleic anhydride acrylamide, methacrylamide, a vinyl aromatic, N,N-dialkylaminoalkyl acrylate, and methacrylate;
and
a polyether comprising a chain of at least one copolymerized ethylene oxide and at least one copolymerized alkylene oxide having at least 3 carbon atoms, said chain having a statistical, alternating, or block distribution;
and
(a2) an additional component;
with the exception of a polymer having a mean particle size d50 of 76 nm as measured by HPPS dynamic light scattering prepared by:
Charging under nitrogen 1500 g of deionized water and 4.5 g of hexadecyltrimethylammonium bromide to a reaction flask,
heating the contents of the flask up to 70° C.,
charging, at this temperature, 0.68 g 2,2′-azo-(2-amidinopropane)dihydrochloride to the reaction flask,
simultaneously starting a monomer feed consisting of 630 g of deionized water, 391.5 g styrene, 60 g of methacrylamide as a 15% solution in water, 4.5 g of divinylbenzene, and 2.48 g of hexadecyltrimethylammonium bromide and continually feeding it for 1.5 hours,
starting, at the same time, an initiator feed containing 170 g of deionized water and 2.3 g of 2,2′-azo-(2-amidinopropane)dihydrochloride and continually feeding it to the reaction flask for 2.5 hours,
starting after 1.5 hours from the start of the first monomer feed, a second monomer feed consisting of 255 g of deionized water, 13.5 g of 2-dimethylaminoethyl methacrylate, 0.9 g of hexadecyltrimethylammonium bromide and 31.5 g of styrene and continually feeding it to the reaction flask during 30 minutes,
post-polymerizing the obtained reaction mixture for 2 hours at 70° C. and then cooling it down to room temperature,
thereby obtaining a dispersion of solid polymeric particles with a solids content of 15% by weight.

12 more elements

Dependencies are inferred from the claim text.