Photoelectric conversion device

A photoelectric conversion device comprising:

• a pair of electrodes;
• a first semiconductor layer having p-type conductivity;
• a second semiconductor layer having p-type conductivity in contact with the first semiconductor layer;
• a third semiconductor layer having n-type conductivity in contact with the second semiconductor layer;
• and
• a light-transmitting conductive film in contact with the third semiconductor layer,
• wherein the first semiconductor layer comprises a compound semiconductor represented by Cu(In1−xGax)Se2 (0≦x≦1, x is greater than or equal to 0 and less than or equal to 1),
• wherein the first semiconductor layer, the second semiconductor layer, the third semiconductor layer and the light-transmitting conductive film are provided between the pair of electrodes, and
• wherein the second semiconductor layer comprises a composite material, the composite material comprising an organic compound and an inorganic compound.

A method for manufacturing a photoelectric conversion device comprising the steps of:

• forming a first electrode;
• forming a first semiconductor layer having p-type conductivity over the first electrode;
• forming a second semiconductor layer having p-:type conductivity over and in contact with the first semiconductor layer;
• forming a third semiconductor layer having ti-type conductivity over and in contact with the second semiconductor layer;
• forming a light-transmitting conductive film over and in contact with the third semiconductor layer;
• and
• forming a second electrode over the light-transmitting conductive film, wherein the second semiconductor layer comprises a composite material, the composite material comprising an organic compound and an inorganic compound.