Semiconductor structure made using improved multiple ion implantation process

A method of forming a semiconductor structure, comprising:

• providing a first source of plasma (first plasma), which includes a first species of ions;
• providing a second source of plasma (second plasma), which includes a second, differing, species of ions;
• employing a mechanical mechanism to selectively:
• (i) permit the first plasma to pass through an outlet and seal off the second plasma, and (ii) permit the second plasma to pass through the outlet and seal off the first plasma;
• and
• serially receiving from the outlet, and accelerating, the selected first or second plasma, respectively, toward a semiconductor wafer to serially bombard an implantation surface of the semiconductor wafer with the first and second species of ions, respectively, thereby creating an exfoliation layer therein.