Vapor-phase growing apparatus and vapor-phase growing method

A vapor-phase growing method, comprising:

• disposing and fixing a substrate on a susceptor, in a reactor containing a plurality of gas introduction portions and a gas reaction portion located below the gas introduction portions, of which a surface is exposed in an interior space of the gas reaction portion of the reactor;
• supplying a raw material gas and a carrier gas at a first ratio of flow rate onto the substrate in the gas reaction portion through a gas distributor provided between the gas introduction portions and the gas reaction portion of the reactor to form a first film on the substrate;
• and
• switching the raw material gas and the carrier gas by a switching device, which is provided in an outside of the reactor, for switching gases to be supplied to the gas inlet conduits, respectively so as to supply the raw material gas and the carrier gas at a second ratio of flow rate different from the first ratio of flow rate onto the substrate in the gas reaction portion through the gas distributor to form a second film on the first film.