Vapor-phase growing apparatus and vapor-phase growing method

A vapor-phase growing method, comprising:

• disposing and fixing a substrate on a susceptor, in a reactor containing a gas introduction portion and a gas reaction portion continued from the gas introduction portion, of which a surface is exposed in an interior space of the gas reaction portion of the reactor;
• supplying a raw material gas, a carrier gas and a subflow gas to the gas introduction portion of the reactor from a plurality of gas inlet conduits which are arranged subsequently along a direction of height of the reactor in the gas introduction portion of the reactor to form a first film on the substrate;
• and
• switching the raw material gas, the carrier gas and the subflow gas by a switching device, which is provided in an outside of the reactor, for switching gases to be supplied to the gas inlet conduits, respectively so as to control a flow rate of the raw material gas to be supplied to the gas inlet conduits of the reactor to form a second film on the first film.