Production process for semiconductor device

A semiconductor device production process comprising:

• (a) forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids,
• (b) forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids,
• (c) forming on the n-type layer an active layer made of a group III nitride compound semiconductor,
• (d) forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor,
• (e) bonding a support substrate above the p-type layer,
• (f) peeling off the growth substrate at the boundary where the void are produced, and
• (g) planarizing the n-type layer, wherein
• (b) above comprises
• (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak, and
• (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.