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US 2012/0231607 A1Published application
Method for forming a silicon layer on any substrate using light irradiation
AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsTaeyoon LEE, Ja Hoon KOO, Sang Wook LEE, Ka Young LEE
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Abstract
A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate.
Claims20
A method for forming a silicon layer, comprising:
- preparing an SOI substrate;
- applying an etchant or vapor of the etchant to the SOI substrate;
- and
- irradiating a light to the SOI substrate.
1 more element
A method for forming a transferable silicon layer, the method comprising:
- preparing an SOI substrate;
- applying an etchant or vapor of the etchant to the SOI substrate;
- and
- increasing a permeability of the etchant or the vapor of the etchant through a silicon layer of the SOI substrate to reach an insulating layer of the SOI substrate.
1 more element
A method of forming transferable silicon layer, the method comprising:
- providing an SOI substrate comprising a bulk silicon layer, an oxide layer and a single crystalline silicon layer;
- and
- removing the oxide layer while leaving the single crystalline silicon layer directly on the bulk silicon layer by irradiating a light to the SOI substrate while applying an etchant or vapor of the etchant to the SOI substrate.
Dependencies are inferred from the claim text.