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US 2012/0231604 A1Published application
Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
AssigneeMicron Technology, Inc.
InventorJun Liu
Life of this patent
Estimating the term…
Abstract
Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device.
Claims20
A method of forming a memory device, the method comprising:
- removing material disposed between a first memory cell and a second memory cell to form a cavity between the first memory cell and the second memory cell;
- and
- forming a dielectric material extending over and between the first memory cell and the second memory cell to at least substantially enclose the cavity between the first memory cell and the second memory cell.
A method of forming a memory device, the method comprising:
- at least partially surrounding a volume of variable resistance material of each of a first memory cell and a second memory cell with a dielectric material and at least substantially filling a space between the volume of variable resistance material of the first memory cell and the volume of variable resistance material of the second memory cell with the dielectric material;
- forming a cavity in the dielectric material between the first memory cell and the second memory cell;
- and
- enclosing the cavity by providing another dielectric material over an opening to the cavity between the first memory cell and the second memory cell.
1 more element
Dependencies are inferred from the claim text.