Methods of forming phase change material layers and methods of manufacturing phase change memory devices

A method of forming a phase change material layer, comprising:

• forming an insulation structure on an object;
• forming a structure through the insulation structure, the structure exposing the object;
• and
• depositing a Ge-M-Te (GMT) ternary phase change material where Ge is germanium, M is a heavy metal, and Te is tellurium, by a sputtering process using at least one source target to form the phase change material layer on the insulation structure and the object, the phase change material layer filling the structure.

A method of manufacturing a phase change memory device, comprising:

• forming a first wiring on a substrate;
• forming at least one insulation layer on the first wiring;
• forming a variable resistance unit through the at least one insulation layer, the variable resistance unit including a first electrode contacting the first wiring, a phase change material layer pattern and a second electrode, the phase change material layer pattern including a Ge-M-Te (GMT) ternary phase change material, where Ge is germanium, M is a heavy metal, and Te is tellurium;
• and
• forming a second wiring on the variable resistance unit and the at least one insulation layer.

A method of manufacturing a phase change memory device, comprising:

• forming an insulating interlayer on a substrate including a contact region, the insulating interlayer having an opening that exposes the contact region;
• forming a lower electrode in the opening;
• forming an insulation structure on the insulating interlayer, the insulation structure having a structure that exposes the lower electrode;
• forming a phase change material layer pattern in the structure, the phase change material layer pattern including a Ge-M-Te (GMT) ternary phase change material, where Ge is germanium, M is a heavy metal, and Te is tellurium;
• and
• forming an upper electrode on the phase change material layer pattern.