Thin-film transistor array device manufacturing method

A thin-film transistor array device manufacturing method comprising:

• preparing a substrate;
• forming a first gate electrode above the substrate;
• forming a second gate electrode above the substrate and adjacent to the first gate electrode;
• forming a gate insulating film on the first gate electrode and the second gate electrode;
• forming, on the gate insulating film, a noncrystalline semiconductor film at least in a first region above the first gate electrode and a second region above the second gate electrode;
• irradiating the noncrystalline semiconductor film formed in the first region and the second region with a laser beam having continuous convex light intensity distributions in both a short-axis direction and a long-axis direction;
• and
• forming a first source electrode and a first drain electrode above the first region, and a second source electrode and a second drain electrode above the second region,
• wherein, in the irradiating, when irradiating the first region of the noncrystalline semiconductor film with an inner region of the laser beam, the second region is irradiated with an outer region of the laser beam which is a region outside of the inner region, continuous from the inner region, and with a light intensity lower than the light intensity of the inner region.