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US 2012/0231573 A1Published application
Back side illumination image sensor and a process thereof
AssigneeHimax Imaging Limited
InventorsYANG WU, CHI-SHAO LIN
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Abstract
A process and structure of a backside illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed.
Claims8
A process of forming a back side illumination (BSI) image sensor, comprising:
- forming an n-type doped region in a semiconductor substrate;
- forming a transfer gate on the semiconductor substrate, therefore resulting in an overlap between one end of the transfer gate and the n-type doped region;
- and
- forming a p-type doped region in the n-type doped region using the transfer gate as a mask.
1 more element
A process of forming a back side illumination BC image sensor, comprising:
- forming a transfer gate channel implant in a semiconductor substrate;
- forming an n-type doped region in the semiconductor substrate;
- forming a p-type doped region in the n-type doped region;
- and
- forming a transfer gate on the semiconductor substrate to substantially cover the n-type doped region and the p-type doped region.
2 more elements
Dependencies are inferred from the claim text.