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US 2012/0231180 A1Published application
Process of purifying ruthenium precursors
AssigneeAir Liquide Electronics U.S. LP
InventorsBin XIA, Zhiwen Wan, Ashutosh Misra, Olivier Letessier
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Abstract
Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.
Claims17
A method of purifying a ruthenium containing precursor, the method comprising:
- removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor.
A method of forming an improved ruthenium containing film, the method comprising:
- depositing a ruthenium containing film by using a ruthenium containing precursor having reduced oxygen concentration in CVD, ALD, or PVD.
Dependencies are inferred from the claim text.