Metal/oxide one time progammable memory
OwnerJun Liuinventor
Life of this patent
Estimating the term…
Abstract
Embodiments include memory cells having an oxide material in contact with a metal material. In one embodiment, a memory cell includes titanium nitride, titanium oxynitride in contact with the titanium nitride and copper in contact with the titanium oxynitride. A plurality of such memory cells and respective access devices can be included in a memory array. The memory cell and access device are electrically connected between an access line and a data/sense line. An array can include a plurality of memory cells vertically stacked with respective access devices. Embodiments also include methods of forming memory cells and arrays and stacking memory arrays over one another.
Claims41
A memory cell comprising:
- an oxide material, the oxide material comprising any one of titanium oxynitride, zirconium oxide, aluminum oxide, and tantalum oxide;
- and
- a metal material in contact with the oxide material.
A memory array comprising:
- a first plurality of memory cells, each memory cell comprising:
- a first conductive material;
- a first oxide material in contact with the first conductive material, the first oxide material comprising any one of titanium oxynitride, zirconium oxide, aluminum oxide, and tantalum oxide;
- and
- a first metal material in contact with the first oxide material;
- and
- a first plurality of access devices, each access device electrically connected to a respective memory cell.
A memory array comprising:
- a first plurality of memory cells;
- a first plurality of access devices, each of the first plurality of access devices electrically connected to a respective one of the first plurality of memory cells, the first plurality of memory cells and the first plurality of access devices being located on a common first horizontal plane;
- a second plurality of memory cells, each of the first and second plurality of memory cells comprising:
- titanium nitride;
- titanium oxynitride in contact with the titanium nitride;
- and
- copper in contact with the titanium oxynitride;
- and
- a second plurality of access devices, each of the second plurality of access devices a in electrical contact with a respective one of the second plurality of memory cells,
- the second plurality of memory cells and the second plurality of access devices located on a common second horizontal plane, the second horizontal plane located over the first horizontal plane.
A method of forming a memory array, the method comprising:
- forming at least one array level, wherein forming the array level comprises:
- forming a stack of materials over a substrate, the stack comprising:
- a first metal material;
- an n-type silicon material over and in contact with the metal material;
- a p-type silicon material over and in contact with the n-type silicon material;
- a conductive material over and in contact with the p-type silicon material;
- etching the stack to form a plurality of lines of the materials;
- forming a first dielectric material over and between the lines;
- forming a plurality of first trenches within the dielectric material and perpendicular to the lines, a portion of the bottom surface of each first trench being a top surface of the titanium nitride material;
- forming an oxide material on the top surface of the conductive material;
- forming a second metal material in the first trenches;
- forming a plurality of second trenches, the second trenches formed parallel and adjacent to the first trenches and formed by removing portions of:
- the first dielectric material, the n-type silicon material, the p-type silicon material, the conductive material and the oxide material;
- and
- forming a second dielectric material within the second trenches.
Dependencies are inferred from the claim text.