Semiconductor layer forming method and structure

A method comprising:

• inspecting first structures within a first semiconductor device;
• determining based on said inspecting said first structures, that said first semiconductor device requires a first engineering change order (ECO);
• determining a first additional structure layer required to implement said first ECO;
• selecting a first insertion point location within said first semiconductor device for inserting said first additional structure layer;
• associating said first insertion point location with a second insertion point location within a design for a second semiconductor device, wherein said second semiconductor device is associated with said first semiconductor device;
• and
• generating said second semiconductor device in accordance with said first ECO, wherein said second semiconductor device comprises second structures, wherein said second structures comprise same structures as said first structures, wherein said second structures are formed in locations within said second semiconductor device that are associated with locations in said first semiconductor device comprising said first structures, wherein said second semiconductor device comprises said first additional structure layer, wherein said first additional structure layer comprises first electrically conductive structures formed within a first insulator layer, wherein said first additional structure layer is located within said second insertion point location, and wherein said first electrically conductive structures are electrically connected to a first group of structures of said second structures.