US 2012/0075943 A1 · Method and Apparatus for Memory Repair With Redundant Columns

Abstract

A first redundant column is used to repair multiple defects in an array of memory cells. The defects include at least a first defect and a second defect in different main columns of a plurality of main columns in the array. However, all of the multiple defects repaired by the first redundant column are not required to be in different main columns. The array is arranged into a plurality of rows accessed by row addresses and the plurality of main columns accessed by column addresses.

Claims20

Dependent claims

A memory device, comprising:

an array of memory cells arranged into:
a plurality of rows, wherein particular rows in the plurality of rows are identified by row addresses;
and
a plurality of main columns, wherein particular main columns in the plurality of main columns are identified by column addresses;
a first redundant column that repairs a first plurality of defects in the array, the first plurality of defects including a first defect and a second defect in different main columns of the plurality of main columns;
and
control circuitry that repairs the first plurality of defects in the array with the first redundant column.

4 more elements

Dependencies are inferred from the claim text.

Method and Apparatus for Memory Repair With Redundant Columns

Life of this patent

Method and Apparatus for Memory Repair With Redundant Columns

Life of this patent

Abstract

Claims20