Method, apparatus and system to determine access information for a phase change memory
AssigneeIntel Corporation
InventorsDerchang Kau, Albert Fazio
Life of this patent
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Abstract
Techniques for determining access information describing an accessing of a phase change memory (PCM) device. In an embodiment, an initial read time for a PCM cell is determined based on a final read time for the PCM cell, set threshold voltage information and a reset threshold voltage drift, wherein the final read time and the initial read time define a time window for reading the PCM cell. In another embodiment, a time window extension is determined based on a reset threshold voltage drift.
Claims20
A method comprising:
- identifying a final read time for accessing a phase change memory (PCM) cell;
- identifying set threshold voltage information for the PCM cell, the set threshold voltage information associated with the final read time;
- identifying a reset threshold voltage drift associated with the PCM cell;
- based on the identified final read time, set threshold voltage information and reset threshold voltage drift, determining an initial read time for the PCM cell, wherein the final read time and the initial read time define a time window outside of which the PCM cell is not allowed to be accessed using a first demarcation voltage;
- and
- generating an output signal indicating the determined initial read time.
A computer-readable storage medium having stored thereon instructions which, when executed by one or more processors, cause the one or more processors to perform a method comprising:
- identifying a final read time for accessing a phase change memory (PCM) cell;
- identifying set threshold voltage information for the PCM cell, the set threshold voltage information associated with the final read time;
- identifying a reset threshold voltage drift associated with the PCM cell;
- based on the identified final read time, set threshold voltage information and reset threshold voltage drift, determining an initial read time for the PCM cell, wherein the final read time and the initial read time define a time window outside of which the PCM cell is not allowed to be accessed using a first demarcation voltage;
- and
- generating an output signal indicating the determined initial read time.
A device comprising:
- circuitry to identify a final read time for accessing a phase change memory (PCM) cell;
- circuitry to identify set threshold voltage information for the PCM cell, the set threshold voltage information associated with the final read time;
- circuitry to identify a reset threshold voltage drift associated with the PCM cell;
- circuitry to determine, based on the identified final read time, set threshold voltage information and reset threshold voltage drift, an initial read time for the PCM cell, wherein the final read time and the initial read time define a time window outside of which the PCM cell is not allowed to be accessed using a first demarcation voltage;
- and
- circuitry to generate an output signal indicating the determined initial read time.
Dependencies are inferred from the claim text.