Phase change memory state determination using threshold edge detection

A non-volatile memory controller comprising:

• at least one interface to connect to an array of phase change memory (PCM) cells;
• and
• electronic circuitry to:
• increase a magnitude of a bias signal applied to at least one of said array of PCM cells in response to a read command;
• infer a value of resistance of said at least one of said PCM cells based, at least in part, on a measurement of a cell current and/or voltage of said at least one of said PCM cells;
• and
• determine a state of said at least one of said PCM cells based, at least in part, on a change in said resistance occurring while said magnitude is increased.

A system comprising:

• a memory device comprising an array of phase change memory (PCM) cells comprising a phase change material, said memory device further comprising a memory controller to:
• increase a magnitude of a bias signal applied to at least one of said PCM cells in response to a read command;
• infer a value of resistance of said at least one of said PCM cells based, at least in part, on a measurement of a cell current and/or voltage of said at least one of said PCM cells;
• and
• determine a state of said at least one of said PCM cells based, at least in part, on a change in said resistance occurring while said magnitude is increased;
• and
• a processor to host one or more applications and to initiate said read command to said memory controller to provide access to said memory cells in said memory cell array.