Non-volatile semiconductor memory device

A non-volatile semiconductor memory device comprising:

• a memory cell array which comprises a plurality of first lines, a plurality of second lines intersecting the plurality of first lines and a plurality of memory cells which are arranged at each intersection part of the plurality of first and second lines and which store an electrically rewritable resistance value as data in a non-volatile manner;
• a first decoder which is connected to one ends of the plurality of first lines and selects the first lines;
• a second decoder which is connected to one ends of the plurality of second lines and selects the second lines;
• and
• a voltage applying circuit which is connected to at least one of the first decoder and the second decoder and which applies a predetermined voltage between the first lines and the second lines selected by the first decoder and the second decoder,
• the second lines grouped into a plurality of groups in a direction in which the first lines extend, and
• the second decoder sequentially selecting a group of the second lines in a direction from the other ends to the one ends of the first lines.

A method of controlling a non-volatile semiconductor memory device which comprises:

• a memory cell array which comprises a plurality of first lines, a plurality of second lines intersecting the plurality of first lines and a plurality of memory cells which are arranged at each intersection part of the plurality of first and second lines and which store an electrically rewritable resistance value as data in a non-volatile manner, the method comprising:
• selecting the plurality of first lines by a first decoder connected with one ends of the first lines;
• selecting the plurality of second lines by a second decoder connected with one ends of the second lines;
• and
• with a voltage applying circuit, applying a predetermined voltage to memory cells between the first and second lines selected by the first decoder and the second decoder, wherein
• the second lines are sequentially selected by the second decoder in a direction from the other ends of the first lines to the one ends of the first lines.