Lcd panel and method for manufacturing the same

A liquid crystal display (LCD) panel comprising a display region and a non-display region, characterized in that, the LCD panel further comprises:

• a glass substrate;
• a plurality of first thin-film transistors (TFTs) is placed on the non-display region of the glass substrate, each first TFT comprises a gate, an insulating layer on the gate, a semiconductor layer on the insulating layer, a source and a drain on the semiconductor layer and on the insulating layer;
• a plurality of second TFTs is placed on the display region of the glass substrate, each second TFT comprises a gate, an insulating layer on the gate, a semiconductor layer on the insulating layer, a source and a drain on the semiconductor layer and on the insulating layer;
• a passivation layer is placed on the source and the drain of the first TFT, and on the source and the drain of the second TFT;
• a first transparent electrode layer is placed over the first TFT and is separated by the passivation layer from the first TFT;
• and
• a second transparent electrode layer is electrically connected to the drain or the source of the second TFT through a hole dug on the passivation layer.

A method of manufacturing the LCD panel having a display region and a non-display region, the method comprising the following steps:

• providing a glass substrate and forming a first metallic layer on the glass substrate, characterized in that, the method further comprises:
• gates of a plurality of first TFTs are formed on the non-display region with the first metallic layer and gates of a plurality of the second TFTs are formed on the display region with the first metallic layer;
• an insulating layer is formed on each gate of the first TFTs and on each gate of the second TFTs;
• a semiconductor layer is formed on the insulating layer;
• a source and a drain of each first TFT, and a source and a drain of each second TFT are formed on the semiconductor layer and the insulating layer;
• a passivation layer is formed on the source and the drain of each first TFT, and on the source and the drain of each second TFT;
• and
• an ITO layer is formed on the passivation layer and the ITO layer is etched with a mask to form a first transparent electrode layer and a second transparent electrode layer, and the second transparent electrode layer is electrically connected to the drain or the source of the second TFT, and the first transparent electrode layer is placed over the first TFT with the passivation layer being between the first transparent electrode layer and the first TFT.