Method and apparatus for device parameter measurement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTseng Chin Luo, Chu Fu CHEN, Min-Tar LIU, Yuan-Yao CHANG
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Abstract
A method of measuring a parameter of a device in a circuit includes providing a device under test (DUT). The DUT includes a metal oxide semiconductor (MOS) transistor having a gate, a source, and a drain coupled to a first voltage supply node. The method further includes coupling a constant current source to the source of the transistor, coupling an operational amplifier to the transistor, and measuring a parameter of the transistor.
Claims20
A device parameter test circuit comprising:
- an operational amplifier having a first input at a first node, a second input at a second node, and an output at a third node, the first node being coupled to a reference voltage;
- a first switch configured to selectively couple the second node to the third node;
- a second switch configured to selectively couple the second node to a fourth node;
- a constant current source coupled to the fourth node;
- and
- a third switch configured to selectively couple the fourth node to a first voltage supply node;
- wherein the device parameter test circuit is configured through selective triggering of the switches to measure a selected parameter from a plurality of parameters of a device coupled to the device parameter test circuit.
A method of measuring a parameter of a device in a circuit, the method comprising:
- providing a device under test (DUT) including a metal oxide semiconductor (MOS) transistor having a gate, a source, and a drain coupled to a first voltage supply node;
- coupling a constant current source to the source of the transistor;
- coupling an operational amplifier to the transistor;
- and
- measuring a parameter of the transistor.
A circuit comprising:
- an operational amplifier having a first input at a first node, a second input at a second node, and an output at a third node, the first node being coupled to a reference voltage;
- a constant current source coupled to the second node and to a first voltage supply node;
- and
- a metal oxide semiconductor (MOS) transistor having a gate coupled to the third node, a source coupled to the second node, and a drain coupled to a second voltage supply node,
- wherein the operational amplifier is provided by a first source measurement unit (SMU) comprising the operational amplifier and a measurement device configured to measure the voltage of the third node, and wherein the constant current source is provided by a second SMU.
A circuit test system comprising:
- a plurality of transistors arranged in rows and columns,
- a first plurality of source measurement units (SMUs), each SMU in the first plurality of SMUs corresponding to one of the rows and comprising an operational amplifier having a first input, a second input, and an output provided at a corresponding one of a first plurality of lines, that SMU configured to measure a voltage of the corresponding said one line in the first plurality;
- a second plurality of SMUs, each SMU in the second plurality of SMUs corresponding to one of the rows and configured to provide a constant current source to a corresponding one of a second plurality of lines;
- a decoder configured to select one of the columns;
- and
- a switching module configured to:
- couple a gate of each transistor in the selected column to a corresponding line in the first plurality of lines, and
- couple a source of each transistor in the selected column to a corresponding line in the second plurality of lines;
- wherein the source of each transistor in the selected column is coupled by the switching module to the second input of the operational amplifier in a corresponding SMU in the first plurality of SMUs.
Dependencies are inferred from the claim text.