Power converter circuits including high electron mobility transistors for switching and rectifcation
AssigneeCree, Inc.
InventorRobert Joseph Callanan
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Abstract
A power converter circuit includes a storage component, a rectifier component comprising a first field effect transistor and having first and second bias states, and a switch including a second field effect transistor having first and second operational states. The first and second field effect transistors are High Electron Mobility Transistors (HEMTs).
Claims20
A power converter circuit, comprising:
- a storage component;
- a rectifier component comprising a first field effect transistor and having first and second bias states;
- and
- a switch comprising a second field effect transistor having first and second operational states;
- wherein the first and second field effect transistors comprise first and second high electron mobility transistors (HEMTs), respectively.
A power converter circuit having a switching frequency in a range of about 10 MHz-100 MHz when operating in a resonance switched operational mode and having an efficiency of at least about 95%.
A power converter circuit having a switching frequency in a range of about 1 MHz-10 MHz when operating in a hard switched operational mode and having an efficiency of at least about 95%.
Dependencies are inferred from the claim text.