Semiconductor structure having a through substrate via (tsv) and method for forming

A method of forming a through via in a substrate, comprising:

• forming an opening in at a top surface of a substrate to a first depth;
• filling the opening with conductive material;
• and
• backgrinding a bottom surface of the substrate to expose the conductive material, wherein the opening:
• has a first feature and a second feature separated by a first length along a length direction of the opening, wherein the first feature and the second feature have a maximum width, and
• has a minimum width between the first feature and the second feature, wherein the minimum width is no more than half the maximum width and no more than one fifth the first length.

A structure having a through via from a top surface of a substrate through the substrate to a bottom surface of the substrate, comprising:

• a conductive material in the substrate forming the through via, wherein:
• the conductive material has a first feature, a second feature, and a conductive line between the first feature and the second feature;
• the conductive line has a minimum width at the top surface of the substrate;
• the first feature and the second feature have a maximum width at the top surface of the substrate;
• the conductive line has a first length at the top surface;
• the maximum width is at least twice the minimum width;
• and
• the first length is at least five times the minimum width.