Semiconductor device, method for manufacturing of semiconductor device, and switching circuit

A semiconductor device manufacturing method comprising:

• preparing a semiconductor substrate;
• forming, on the semiconductor substrate, a plurality of ground side electrodes and a plurality of signal side electrodes arranged in an alternating manner;
• forming an insulating layer on a surface of the semiconductor substrate, at least in a region between each pair of a ground side electrode and a signal side electrode;
• forming a plurality of control electrodes arranged on the insulating layer respectively between each pair of a ground side electrode and a signal side electrode;
• forming a ground side electrode connecting section that connects the ground side electrodes to each other;
• forming a signal side electrode connecting section that connects the signal side electrodes to each other;
• and
• forming ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near an other end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.

A switching circuit comprising a semiconductor device that operates as a switching element, wherein the semiconductor device includes:

• a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner;
• a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode;
• a ground side electrode connecting section that connects the ground side electrodes to each other;
• a signal side electrode connecting section that connects the signal side electrodes to each other;
• and
• ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near an other end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.