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US 2012/0074574 A1Published application
Semiconductor structure and method for making same
AssigneeInfineon Technologies AG
InventorsHans-Joachim BARTH, Gottfried BEER, Joern PLAGMANN, Jens POHL, Werner ROBL, Rainer STEINER, Mathias VAUPEL
Life of this patent
Estimating the term…
Abstract
One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.
Claims12
1-40. (canceled)
A semiconductor structure, comprising:
- a barrier layer overlying a substantially planar top surface of a workpiece;
- a seed layer overlying said barrier layer;
- an inhibitor layer overlying said seed layer, said inhibitor layer having an opening exposing a portion of said seed layer, said exposed portion of said seed layer overlying said substantially planar top surface of said workpiece;
- and
- a fill layer overlying said exposed portion of said seed layer.
2 more elements
(canceled)
47-62. (canceled)
Dependencies are inferred from the claim text.