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US 2012/0074573 A1Published application
Semiconductor structure and method for making same
AssigneeInfineon Technologies AG
InventorsGerald DALLMANN, Heike ROSSLAU, Norbert URBANSKY, Scott WALLACE
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Abstract
One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.
Claims30
A method of forming a semiconductor device, comprising:
- forming a structure, said structure including at least a first element and a second element;
- and
- forming a passivation layer over said structure, said passivation layer including at least said first element and said second element, said first element and said second element of said passivation layer coming from said structure.
A method of forming a semiconductor structure, comprising:
- providing a workpiece;
- forming a barrier layer over said workpiece, said barrier layer including Ti (titanium);
- forming a seed layer over said barrier layer, said seed layer comprising Cu (copper) and an additional element;
- and
- forming a fill layer over said seed layer, said fill layer including Cu (copper).
2 more elements
A semiconductor structure, comprising:
- a workpiece;
- a barrier layer overlying said workpiece, said barrier layer including a first element;
- a seed layer overlying said barrier layer, said seed layer including a metallic alloy, said metallic alloy including Cu (copper) and a second element;
- and
- a fill layer overlying said seed layer, said fill layer comprising Cu (copper).
2 more elements
Dependencies are inferred from the claim text.