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US 2012/0074572 A1Published application
Semiconductor structure and method for making same
AssigneeInfineon Technologies AG
InventorsThomas FISCHER, Juergen FOERSTER, Werner ROBL, Andreas STUECKJUERGEN
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Abstract
One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.
Claims26
A method for making a semiconductor structure, comprising:
- providing a workpiece;
- forming a barrier layer over said workpiece;
- forming a separation layer over said barrier layer;
- forming a conductive layer over said separation layer;
- and
- wet etching said conductive layer.
3 more elements
A method for making a semiconductor structure, comprising:
- providing a workpiece;
- forming a barrier layer over said workpiece, said barrier layer comprising W (tungsten);
- forming a separation layer over said first layer, said separation layer essentially lacking W (tungsten);
- forming a conductive layer over said second layer, said metallic layer comprises Cu (copper);
- and
- wet etching said conductive layer.
3 more elements
A method for making a semiconductor structure, comprising:
- providing a conductive layer, said conductive layer comprising Cu (copper);
- and
- wet etching said conductive layer while essentially no W (tungsten) directly contacts said conductive layer.
A semiconductor structure, comprising:
- a workpiece;
- a barrier layer overlying said workpiece;
- a separation layer overlying said barrier layer, said separation layer essentially lacking W (tungsten);
- a conductive layer overlying said separation layer.
1 more element
Dependencies are inferred from the claim text.