Method for Forming a Through Via in a Semiconductor Element and Semiconductor Element Comprising the Same

A method for forming a through via in a semiconductor element, the method comprising:

• providing a semiconductor element having electronic circuitry integrated on or in a main side thereof, the semiconductor element having a conductive region at the main side, wherein the conductive region comprises tungsten;
• etching a through hole from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the conductive region, and
• filling at least partially the through hole with a conductive material so as to form the through via, so that the conductive material is electrically connected to the conductive region and electrically isolated from the remaining semiconductor element.

A semiconductor element, comprising:

• electronic circuitry integrated on or in a main side of the semiconductor element;
• a conductive region arranged at the main side of the semiconductor element, wherein the conductive region is spaced apart from a semiconductor substrate main surface of the semiconductor element;
• a through via extending from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the conductive region, wherein the through via is at least partially filled with a conductive material, forming an electrical connection from the backside of the semiconductor element to the conductive region at the main side of the semiconductor element, wherein an isolation layer is arranged between the conductive material and the semiconductor element to electrically isolate the conductive material from the semiconductor element, and wherein the isolation layer is conformally aligned to an edge of the through via at the backside of the semiconductor element.

A semiconductor element, comprising:

• electronic circuitry integrated on or in a main side of the semiconductor element;
• a conductive region comprising tungsten arranged at the main side of the semiconductor element;
• a through via extending from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the conductive region, wherein the through via is at least partially filled with a conductive material, forming an electrical connection from the backside of the semiconductor element to the conductive region at the main side of the semiconductor element, wherein an isolation layer is arranged between the conductive material and the semiconductor element to electrically isolate the conductive material from the semiconductor element, and wherein the isolation layer is conformally aligned to an edge of the through via at the backside of the semiconductor element.