Semiconductor Device and Method of Forming Vertical Interconnect Structure Between Non-Linear Portions of Conductive Layers

A semiconductor device, comprising:

• a first semiconductor die;
• an interconnect structure disposed proximate to the first semiconductor die;
• a first conductive layer having a non-linear portion disposed over a first surface of the interconnect structure;
• a second conductive layer having a non-linear portion disposed over a second surface of the interconnect structure opposite the first conductive layer;
• and
• an encapsulant deposited around the first semiconductor die and interconnect structure.

A semiconductor device, comprising:

• a first semiconductor die;
• an interconnect structure having a non-linear surface disposed proximate to the first semiconductor die;
• a first conductive layer disposed over the non-linear surface of the interconnect structure;
• a second conductive layer disposed over the non-linear surface of the interconnect structure opposite the first conductive layer;
• and
• an encapsulant deposited around the first semiconductor die and interconnect structure.

A semiconductor device, comprising:

• a first semiconductor die;
• an interconnect structure having a non-linear surface disposed proximate to the first semiconductor die;
• a first conductive layer disposed over the non-linear surface of the interconnect structure;
• and
• an encapsulant deposited around the first semiconductor die and interconnect structure.