Low dielectric constant material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
InventorsHsin-Yen Huang, Ching-Yu Lo, Hai-Ching Chen, Tien-I Bao
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Abstract
The present disclosure provides a dielectric material including a low dielectric constant material and an additive. The additive includes a compound having a Si—X—Si bridge, where X is a number of carbon atoms between 1 and 8. The additive may include terminal Si—CH3 groups. The dielectric material including the additive may be used as an inter-layer dielectric (ILD) layer of a semiconductor device. The dielectric material including the additive may be formed using a CVD or sol-gel process. One example of the additive is bis(triethoxysilyl)ethene.
Claims20
A material, comprising:
- a low dielectric constant material;
- and
- an additive, wherein the additive includes a compound having a Si—X—Si bridge, wherein X is a number of carbon atoms between 1 and 8.
A method of depositing a layer on a substrate, comprising:
- depositing a dielectric material, wherein the dielectric material includes a low-k dielectric and an additive, and wherein the dielectric material has a dielectric constant less than approximately 3 and a carbon content greater than approximately 15% atomic concentration.
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate feature disposed on the semiconductor substrate;
- and
- a dielectric layer overlying the gate feature, wherein the dielectric layer includes an additive having a compound with the structure formula:
- wherein X is —(CH2)n—, n is 1 to 8, and R1 to R6 are one of an alkoxy, an alkyl, and a hydrogen.
Dependencies are inferred from the claim text.