Epitaxy substrate
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsPO-MIN TU, SHIH-CHENG HUANG, CHIA-HUNG HUANG, SHUN-KUEI YANG
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Abstract
An epitaxy substrate for growing a plurality of semiconductor epitaxial layers thereon, includes a plurality of growth areas and a plurality of protected areas. The growth areas are provided for growing the semiconductor epitaxial layers thereon. The growth areas and the protected areas are alternating. A thickness of the growth areas is less than ⅓ of a thickness H of the protected areas.
Claims17
An epitaxy substrate for growing a plurality of semiconductor epitaxial layers, comprising a plurality of growth areas and a plurality of protected areas, the growth areas being adapted for growing the semiconductor epitaxial layers thereon, the growth areas and the protected areas being alternating, a thickness of the growth areas being less than ⅓ of a thickness of the protected areas.
An epitaxy substrate for growing semiconductor epitaxial layers, comprising:
- a plurality of growth areas and a plurality of protected areas being alternating;
- the epitaxy substrate comprising a first surface and a second surface opposite to the first surface;
- portions of the first surface aligning with the growth areas defining a plurality of first grooves;
- portions of the second surface aligning with the growth areas being adapted for growing the semiconductor epitaxial layers thereon;
- a thickness h of the protected areas and a thickness H of the protected areas being satisfied a condition:
- h/H<⅓.
Dependencies are inferred from the claim text.