Miscut semipolar optoelectronic device

A device structure, comprising:

• an initial semi-polar crystal comprising (Al,In,Ga,B)N or III-nitride, wherein:
• the initial semi-polar crystal is grown on a miscut surface of a substrate,
• a subsequent semi-polar III-nitride or (Al,In,Ga,B)N layer is grown on a top surface of the initial semi-polar crystal,
• the top surface is a grown surface opposite the miscut surface of the substrate, and
• the initial semi-polar crystal has a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.

A method of fabricating a III-nitride crystal, comprising:

• depositing an initial crystal on a miscut surface of a substrate, wherein:
• the initial crystal comprises (Al,In,Ga,B)N or III-nitride and a surface perpendicular to a growth direction of the crystal,
• the surface is at least 10 micrometers wide,
• the surface has a semi-polar orientation, and
• the crystal has a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.