Back to results
US 2012/0074523 A1Published application
Controlling microelectronic substrate bowing
OwnerMichael Goldsteininventor
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to the field of epitaxial structures for microelectronic device formation, particularly to heavily doped, substrates having a compensation component embedded along the dopant to prevent bowing of the substrate during deposition of an epitaxial layer.
Claims19
An epitaxial structure comprising:
- a substrate including a dopant and a compensation component, and
- an epitaxial layer formed on the substrate.
A method of forming epitaxial structure comprising:
- providing a substrate including a dopant and a compensation component, and
- forming an epitaxial layer on the substrate.
Dependencies are inferred from the claim text.