Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element

A photoelectric conversion element comprising:

• an insulating film that is formed on a substrate and is made of an oxide film;
• a first electrode that is formed on the insulating film;
• an organic material-containing light receiving layer that is formed on the first electrode and includes an organic material;
• and
• a second electrode that is formed on the light receiving layer,
• wherein the first electrode is made of titanium oxynitride, and
• a composition of the first electrode just before forming the light receiving layer meets
• (1) a requirement that an amount of nitrogen contained in the whole of the first electrodes is 73 atm % or less of an amount of titanium, or
• (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ⅔ of the thickness of the first electrode, an amount of nitrogen is 90 atm % or less of an amount of titanium.

A method for manufacturing a photoelectric conversion element including a substrate having thereon an insulating film made of an oxide film, a first electrode formed on the insulating film, a light receiving layer formed on the first electrode and including an organic material, and a second electrode formed on the light receiving layer, the method comprising:

• forming the first electrode on the insulating film,
• forming the light receiving layer on the first electrode, and
• forming the second electrode on the light receiving layer, wherein
• in the forming step of the first electrode, the first electrode is formed so as to meet
• (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm % or more of an amount of titanium, or
• (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ⅔ of the thickness of the first electrode, an amount of oxygen is 40 atm % or more of an amount of titanium.

A method for manufacturing a photoelectric conversion element including a substrate having thereon an insulating film made of an oxide film, a first electrode formed on the insulating film, a light receiving layer formed on the first electrode and including an organic material, and a second electrode formed on the light receiving layer, the method comprising:

• forming the first electrode on the insulating film,
• forming the light receiving layer on the first electrode, and
• forming the second electrode on the light receiving layer, wherein
• in the forming step of the first electrode, the first electrode is formed so as to meet
• (1) a requirement that an amount of nitrogen contained in the whole of the first electrodes is 73 atm % or less of an amount of titanium, or
• (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ⅔ of the thickness of the first electrode, an amount of nitrogen is 90 atm % or less of an amount of titanium.