Integration of an amorphous silicon resistive switching device

An integrated circuit device, comprising:

• a semiconductor substrate having a surface region;
• a gate dielectric layer overlying the surface region of the substrate;
• a PMOS device formed on the semiconductor substrate, the PMOS device comprising a gate structure overlying the gate dielectric layer, a first p+ active region, and a second p+ active region;
• a resistive switching device, the resistive switching device comprising a switching region overlying the first p+ active region, the switching region comprising an amorphous silicon material, and a first electrode comprising at least a conductive material overlying the switching region, the conductive material being in contact with the switching region;
• and
• a first conductor structure overlying the second active region.

A method for forming an integrated circuit device, comprising:

• provided a semiconductor substrate having a surface region;
• forming a gate dielectric layer overlying the surface region of the semiconductor substrate;
• forming a gate structure for a MOS device overlying the gate dielectric layer;
• forming a first active region and a second active region for the MOS device in a vicinity of the surface region of the substrate;
• forming a switching region comprising an amorphous silicon material for a resistive switching device overlying the first active region;
• forming a first electrode comprising at least a conductive material overlying the switching region;
• and
• forming a first conductor structure overlying the second active region.

An integrated circuit device structure, comprising:

• a semiconductor substrate having a surface region;
• a gate dielectric layer overlying the surface region of the substrate;
• a MOS device formed on the semiconductor substrate, the MOS device comprising a gate structure overlying the gate dielectric layer, a first active region, and a second active region;
• a first conductor structure comprising a first metal material overlying the first active region;
• a resistive switching device, the switching device comprising a switching region comprising an amorphous silicon material overlying the first conductor structure, the first conductor structure forming the first electrode for the resistive switching device, and a second electrode comprising at least a second metal material overlying the switching region, the second metal material being in contact with the switching region;
• and
• a second conductor structure overlying the second active region.