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US 2012/0074487 A1Published application
Apparatus containing cobalt titanium oxide
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Electronic apparatus and methods of forming the electronic apparatus include cobalt titanium oxide on a substrate for use in a variety of electronic systems. The cobalt titanium oxide may be structured as one or more monolayers. The cobalt titanium oxide may be formed by a monolayer by monolayer sequencing process such as atomic layer deposition.
Claims20
An electronic device comprising:
- a dielectric in a circuit on a substrate, the dielectric containing a cobalt titanium oxide, the cobalt titanium oxide structured as an arrangement of one or more monolayers.
A memory comprising:
- a memory array contained memory cells on a substrate, each memory cell including:
- a hemispherical grained polysilicon region;
- cobalt titanium oxide disposed on the hemispherical grained polysilicon region, the cobalt titanium oxide structured as an arrangement of one or more monolayers;
- and
- a conductive material disposed on the cobalt titanium oxide.
2 more elements
An electronic device comprising:
- a dielectric stack in a circuit on a substrate, the dielectric stack containing a plurality of different materials including containing a cobalt titanium oxide, the cobalt titanium oxide structured as an arrangement of one or more monolayers;
- and
- a conductive material on and contacting the dielectric stack.
Dependencies are inferred from the claim text.