Semiconductor devices and methods of manufacturing semiconductor devices

A semiconductor device, comprising:

• a plurality of gate structures spaced apart from each other on a substrate;
• a first insulation layer pattern on sidewalls of lower portions of the gate structures and on a top surface of the substrate between the gate structures, the first insulation layer pattern including a first recess thereon and having a thickness that increases from a top portion to a bottom portion thereof;
• and
• a second insulation layer pattern covering upper portions of the gate structures that are not covered by the first insulation layer pattern, the second insulation layer pattern including a second recess therebeneath in fluid communication with the first recess and having a thickness that increases from a bottom portion to a top portion thereof.

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• forming a plurality of gate structures spaced apart from each other on the substrate such that each of the plurality of gate structures includes a tunnel insulation layer pattern, one of a floating gate and charge trapping layer pattern, one of a dielectric layer pattern and a blocking layer pattern, and one of a control gate and a gate electrode sequentially stacked on the substrate;
• forming a first insulation layer on the plurality of gate structures such that the first insulation layer includes a void between adjacent gate structures;
• removing an upper portion of the first insulation layer to form a first insulation layer pattern on sidewalls of lower portions of the gate structures and on the substrate between the gate structures such that the first insulation layer pattern includes a first recess therein;
• forming a conductive layer on upper portions of each control gate or gate electrode;
• reacting the conductive layer with the upper portions of each control gate or gate electrode to form an upper conductive pattern;
• and
• forming a second insulation layer on the gate structures such that the second insulation layer includes a second recess therein and an air gap is formed between adjacent gate structures.