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US 2012/0074480 A1Published application
Method of forming lutetium and lanthanum dielectric structures
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
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Abstract
Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.
Claims17
A memory cell comprising:
- a dielectric structure comprising lanthanum aluminum oxide crystals embedded in a layer comprising lutetium;
- and
- a control gate adjacent to the dielectric structure.
A memory cell comprising:
- a dielectric structure comprising lanthanum aluminum oxide crystals embedded in lutetium oxide;
- and
- a control gate adjacent to the dielectric structure.
A memory cell, comprising:
- a source region and a drain region;
- a dielectric charge storage structure coupled between the source region and the drain region, including:
- a substantially amorphous lutetium oxide region;
- a plurality of lanthanum aluminum oxide crystals within the substantially amorphous lutetium oxide region.
1 more element
Dependencies are inferred from the claim text.