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US 2012/0074474 A1Published application
Phototransistor and display device including the same
AssigneeSharp Kabushiki Kaisha
InventorsHideki Kitagawa, Hajime Imai, Atsuhito Murai
Life of this patent
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Abstract
A phototransistor includes a source electrode and a gate electrode which have the same electric potential, a transparent electrode formed on a surface of an interlayer insulating film so as to be located above a channel region, and a refresh controller for reducing a charge accumulated in a portion of the channel region, the portion facing the transparent electrode, by applying a voltage between the transparent electrode, and the gate electrode and the source electrode.
Claims7
A phototransistor, comprising:
- a gate electrode formed on an insulating substrate;
- a gate insulating film which covers the gate electrode;
- a semiconductor layer which is formed on a surface of the gate insulating film, and has a channel region opposed to the gate electrode;
- a source electrode and a drain electrode which cover respective portions of the semiconductor layer;
- and
- an interlayer insulating film which covers the channel region of the semiconductor layer, the source electrode and the drain electrode, wherein
- the source electrode and the gate electrode have the same electric potential, and
- the phototransistor includes
- a transparent electrode formed on a surface of the interlayer insulating film so as to overlap the channel region, and
- a refresh controller for reducing a charge accumulated in a portion of the channel region, the portion facing the transparent electrode, by applying a voltage between the transparent electrode, and the gate electrode and the source electrode.
7 more elements
A display device, comprising:
- a plurality of phototransistors by which a location touched by an object on a display screen is detected, wherein
- each of the phototransistors includes
- a gate electrode formed on an insulating substrate,
- a gate insulating film which covers the gate electrode,
- a semiconductor layer which is formed on a surface of the gate insulating film, and has a channel region opposed to the gate electrode,
- a source electrode and a drain electrode which cover respective portions of the semiconductor layer, and
- an interlayer insulating film which covers the channel region of the semiconductor layer, the source electrode and the drain electrode,
- the source electrode and the gate electrode have the same electric potential, and
- each of the phototransistors includes
- a transparent electrode formed on a surface of the interlayer insulating film so as to overlap the channel region, and
- a refresh controller for reducing a charge accumulated in a portion of the channel region, the portion facing the transparent electrode, by applying a voltage between the transparent electrode, and the gate electrode and the source electrode.
8 more elements
Dependencies are inferred from the claim text.