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US 2012/0074424 A1Published application
Gallium nitride based semiconductor devices and methods of manufacturing the same
OwnerJae-hoon LEEinventor
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Abstract
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a conductive heat dissipation substrate (that is, a thermal conductive substrate); an GaN-based multi-layer arranged on the heat dissipation substrate; and a Schottky electrode arranged on the GaN-based multi-layer. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.
Claims29
A gallium nitride (GaN) based semiconductor device comprising:
- a conductive substrate;
- an AlGaN layer arranged on the conductive substrate;
- a GaN layer arranged on the AlGaN layer;
- and
- an electrode layer arranged on the GaN layer, the electrode layer forms a Schottky contact with the GaN layer.
2 more elements
A method of forming a gallium nitride (GaN) based semiconductor device, the method comprising:
- forming a GaN layer on a first substrate;
- forming an AlGaN layer on the GaN layer;
- providing a second substrate on the AlGaN layer;
- removing the first substrate to expose the GaN layer;
- and
- forming an electrode layer on the exposed portion of the GaN layer, the electrode layer forms a Schottky contact with the GaN layer.
3 more elements
Dependencies are inferred from the claim text.