Process for the Simultaneous Deposition of Crystalline and Amorphous Layers with Doping

A method for the concurrent deposition of two crystalline structures on a semiconductor body, comprising;

• preparing the semiconductor body to have a monocrystalline silicon substrate region and an isolating layer region;
• performing in-situ annealing in hydrogen (H2) on the semiconductor body to remove oxygen from the monocrystalline silicon substrate;
• concurrently depositing a first sub-layer over the monocrystalline silicon substrate region and the isolating layer region at a constant first pressure following performance of in-situ annealing in H2;
• concurrently depositing a second sub-layer over the monocrystalline silicon substrate region and the isolating layer region at a variable second pressure greater than the first pressure following deposition of the first sub-layer;
• and
• concurrently depositing a third sub-layer over the monocrystalline silicon substrate region and the isolating layer region at a constant third pressure greater than the second pressure following the deposition of the second sub-layer;
• wherein the first, second, and third sub-layers collectively form an amorphous silicon layer over the isolating layer region and a monocrystalline silicon layer over the monocrystalline silicon substrate region.

A method for the concurrent deposition of three crystalline structures on a semiconductor body, comprising:

• preparing the semiconductor body to have a monocrystalline silicon substrate region, an isolating layer region, and a polycrystalline silicon substrate region;
• performing in-situ annealing in hydrogen (H2) on the semiconductor body to remove oxygen from the monocrystalline silicon substrate;
• concurrently depositing a first sub-layer over the monocrystalline silicon substrate region, the isolating layer region, and the polycrystalline silicon substrate region at a constant first pressure following performance of in-situ annealing in H2;
• concurrently depositing a second sub-layer over the monocrystalline silicon substrate region, the isolating layer region, and the polycrystalline silicon substrate region following deposition of the first sub-layer;
• and
• concurrently depositing a third sub-layer over the monocrystalline silicon substrate region, the isolating layer region, and the polycrystalline silicon substrate region at a constant third pressure following the deposition of the second sub-layer;
• wherein the first pressure is less than the third pressure, and wherein the second sub-layer is deposited at a second pressure that varies between the first pressure and the third pressure;
• and wherein the first, second, and third sub-layers collectively form an amorphous silicon layer over the isolating layer region and a monocrystalline silicon layer over the monocrystalline silicon substrate region, and a polycrystalline silicon layer over the polycrystalline silicon substrate region.