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US 2012/0074387 A1Published application
Microelectronic transistor having an epitaxial graphene channel layer
AssigneeIntel Corporation
InventorSean King
Life of this patent
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Abstract
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to forming a graphene layer as a channel layer for a microelectronic transistor.
Claims30
A transistor comprising:
- a formation substrate;
- a graphene layer abutting the formation substrate;
- a source region abutting the graphene layer;
- a drain region abutting the graphene layer;
- a gate dielectric abutting the graphene between the source region and the drain region;
- and
- a gate abutting the gate dielectric.
4 more elements
A method of fabricating a transistor comprising:
- providing a structural substrate;
- forming a formation substrate on the structural substrate;
- forming a graphene layer on the formation substrate;
- and
- forming a transistor on the graphene layer.
2 more elements
A method of forming a transistor comprising:
- depositing a thermodynamically unstable XC carbide layer on a formation substrate;
- decomposing the XC carbide layer into an X component and carbon;
- volatilizing the X component;
- forming a graphene layer from the carbon;
- and
- forming a transistor on the graphene layer.
3 more elements
Dependencies are inferred from the claim text.