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US 2012/0074382 A1Published application
Light emitting diode and method for manufacture of the same
AssigneeLG Innotek Co., Ltd.
InventorSang Youl LEE
Life of this patent
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Abstract
Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically.
Claims19
A semiconductor light emitting device comprising:
- a substrate comprising a lower portion and an upper portion;
- a light emitting structure on the substrate, disposing closer to the upper portion than the lower portion, and comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers;
- wherein an angle between a bottom surface of the lower portion and a side surface of the lower portion is an obtuse angle,
- wherein an angle between a bottom surface of the first conductive type semiconductor layer and a side surface of the first conductive type semiconductor layer is a right angle.
1 more element
A semiconductor light emitting device, comprising:
- a substrate;
- a semiconductor layer on the substrate;
- and
- an electrode on the semiconductor layer,
- wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically.
2 more elements
Dependencies are inferred from the claim text.